Data Sheet
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Schottky barrier Diode
RB095B-30
?Applications
?Dimensions(Unit : mm)
?Land size figure(Unit : mm)
General rectification
?Features
1)Power mold type.(CPD)
2)Low VF
3)High reliability
?Construction
Silicon epitaxial planar
?Structure
?Taping dimensions(Unit : mm)
?Absolute maximum ratings (Ta=25?C)
Symbol UnitLimits
VRM
V
VR
V
Average rectified forward current(*1) 6Io A
IFSM
A
Junction temperature 150Tj
?C
Tstg
?C
?Electrical characteristic (Ta=25?C)
Symbol Min. Typ. Max. Unit
Forward voltage
VF
- - 0.425 V
IF=3.0A
Reverse current
IR
- - 200
μA
VR=30V
Thermal impedance
?jc
- - 6.0
?C/W
junction to case
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=125?C
Conditions
Storage temperature
?40 to ?150
Parameter
Forward current surge peak (60Hz?1cyc)(*1)
35
Reverse voltage (DC)
30
Parameter
Reverse voltage (repetitive peak)
35
CPD
16
2.32.
1.6
3.0 2.0 6.0
6.0
(1) (3)
(2)
1/3
2011.04 - Rev.F
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